IS45S32160B

容量	512M
規格	16Mx32
電壓	3.3V
類型	SDR
刷新	8K
速度	166, 133
狀態	Contact ISSI
評注
腳位數	TSOP2(86), BGA(90)
產品系列	45 = SDR Automotive grade
字數	160 = 16M
工作電壓範圍	S = 3.3V SDR
總線寬度	32 = x32

數據表

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IS45S32160B 特徵

Clock frequency: 166, 143 MHz
Fully synchronous; all signals referenced to a positive clock edge
Internal bank for hiding row access/precharge
Single Power supply: 3.3V + 0.3V
LVTTL interface
Programmable burst length
- (1, 2, 4, 8, full page)
Programmable burst sequence: Sequential/Interleave
Auto Refresh (CBR)
Self Refresh
8192 refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
Random column address every clock cycle
Programmable CAS latency (2, 3 clocks)
Burst read/write and burst read/single write operations capability
Burst termination by burst stop and precharge command OPTIONS
Package: 86-pin TSOP-II 90-ball W-BGA

概觀

ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized in 4Meg x 32 bit x 4 Banks.

IC 編號

庫存數量

可用數量

IC 編號

庫存數量

可用數量

IS45S32160B-6BLA1

IS45S32160B-7BLA2

339

288

IS45S32160B-6BLA1-TR

IS45S32160B-7BLA2-TR