| 容量 | 512M |
|---|---|
| 規格 | 16Mx32 |
| 電壓 | 3.3V |
| 類型 | SDR |
| 刷新 | 8K |
| 速度 | 7 = 143MHz |
| 狀態 | Contact ISSI |
| 評注 | |
| 腳位數 | TSOP2(86), BGA(90) |
| 產品系列 | 45 = SDR Automotive grade |
| 温度等级 | A2 = Automotive Grade (-40°C to +105°C) |
| 焊料類型 | L = SnAgCu |
| 字數 | 160 = 16M |
| Generation | B = B |
| 工作電壓範圍 | S = 3.3V SDR |
| 總線寬度 | 32 = x32 |
| 腳位/封裝 | B = BGA |
ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized in 4Meg x 32 bit x 4 Banks.
| IC 編號 | 庫存數量 | 可用數量 | IC 編號 | 庫存數量 | 可用數量 |
|---|---|---|---|---|---|
| IS45S32160B-7BLA2-TR | IS45S32160B-7BLA1 | ||||
| IS45S32160B | IS45S32160B-7BLA1-TR | ||||
| IS45S32160B-6BLA1 | IS45S32160B-7TLA1 | ||||
| IS45S32160B-6BLA1-TR | IS45S32160B-7TLA1-TR | ||||
| IS45S32160B-6TLA1 | 4,626 | 4,371 | IS45S32160B-7TLA2 | ||
| IS45S32160B-6TLA1-TR | IS45S32160B-7TLA2-TR |