1. 矽成
  2. 動態記憶體
  3. 同步動態隨機存取記憶體
  4. Preceding 3.3V Automotive
  5. 512M 16Mx32
  6. TSOP2(86), BGA(90)
  7. IS45S32160B-7TLA1

  IS45S32160B-7TLA1

數據表
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容量 512M
規格 16Mx32
電壓 3.3V
類型 SDR
刷新 8K
速度 7 = 143MHz
狀態 Contact ISSI
評注
腳位數 TSOP2(86), BGA(90)
產品系列 45 = SDR Automotive grade
温度等级 A1 = Automotive Grade (-40°C to +85°C)
焊料類型 L = 100% matte Sn
字數 160 = 16M
Generation B = B
工作電壓範圍 S = 3.3V SDR
總線寬度 32 = x32
腳位/封裝 T = TSOP
數據表
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IS45S32160B-7TLA1 特徵

  • Clock frequency: 166, 143 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single Power supply: 3.3V + 0.3V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8192 refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 86-pin TSOP-II 90-ball W-BGA

概觀

ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized in 4Meg x 32 bit x 4 Banks.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS45S32160B-7TLA1-TR IS45S32160B-7BLA1
IS45S32160B IS45S32160B-7BLA1-TR
IS45S32160B-6BLA1 IS45S32160B-7BLA2 339 288
IS45S32160B-6BLA1-TR IS45S32160B-7BLA2-TR
IS45S32160B-6TLA1 4,626 4,371 IS45S32160B-7TLA2
IS45S32160B-6TLA1-TR IS45S32160B-7TLA2-TR