IS45S32160B

Density	512M
Org	16Mx32
Vcc	3.3V
Type	SDR
Refresh	8K
Speed	166, 133
Status	Contact ISSI
Comment
Pkg Pins	TSOP2(86), BGA(90)
Product Family	45 = SDR Automotive grade
Number Of Words	160 = 16M
Operating Voltage Range	S = 3.3V SDR
Bus Width	32 = x32

Datasheet

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IS45S32160B Features

Clock frequency: 166, 143 MHz
Fully synchronous; all signals referenced to a positive clock edge
Internal bank for hiding row access/precharge
Single Power supply: 3.3V + 0.3V
LVTTL interface
Programmable burst length
- (1, 2, 4, 8, full page)
Programmable burst sequence: Sequential/Interleave
Auto Refresh (CBR)
Self Refresh
8192 refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
Random column address every clock cycle
Programmable CAS latency (2, 3 clocks)
Burst read/write and burst read/single write operations capability
Burst termination by burst stop and precharge command OPTIONS
Package: 86-pin TSOP-II 90-ball W-BGA

Overview

ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized in 4Meg x 32 bit x 4 Banks.

Related Part Number(s)

Description	Stock Qty	Available Qty	Description	Stock Qty	Available Qty
IS45S32160B-6BLA1			IS45S32160B-7BLA2	339	288
IS45S32160B-6BLA1-TR			IS45S32160B-7BLA2-TR
IS45S32160B-6TLA1	4,626	4,371	IS45S32160B-7TLA1
IS45S32160B-6TLA1-TR			IS45S32160B-7TLA1-TR
IS45S32160B-7BLA1			IS45S32160B-7TLA2
IS45S32160B-7BLA1-TR			IS45S32160B-7TLA2-TR