容量 | 512M |
---|---|
規格 | 16Mx32 |
電壓 | 3.3V |
類型 | SDR |
刷新 | 8K |
速度 | 7 = 143MHz |
狀態 | Contact ISSI |
評注 | |
腳位數 | TSOP2(86), BGA(90) |
產品系列 | 45 = SDR Automotive grade |
温度等级 | A1 = Automotive Grade (-40°C to +85°C) |
焊料類型 | L = 100% matte Sn |
字數 | 160 = 16M |
Generation | B = B |
工作電壓範圍 | S = 3.3V SDR |
總線寬度 | 32 = x32 |
腳位/封裝 | T = TSOP |
外包裝 | Tape on Reel |
ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized in 4Meg x 32 bit x 4 Banks.
IC 編號 | 庫存數量 | 可用數量 | IC 編號 | 庫存數量 | 可用數量 |
---|---|---|---|---|---|
IS45S32160B-7TLA1 | IS45S32160B-7BLA1 | ||||
IS45S32160B | IS45S32160B-7BLA1-TR | ||||
IS45S32160B-6BLA1 | IS45S32160B-7BLA2 | 339 | 288 | ||
IS45S32160B-6BLA1-TR | IS45S32160B-7BLA2-TR | ||||
IS45S32160B-6TLA1 | 4,626 | 4,371 | IS45S32160B-7TLA2 | ||
IS45S32160B-6TLA1-TR | IS45S32160B-7TLA2-TR |