容量 | 512M |
---|---|
規格 | 16Mx32 |
電壓 | 3.3V |
類型 | SDR |
刷新 | 8K |
速度 | 7 = 143MHz |
狀態 | Prod |
評注 | |
腳位數 | TSOP2(86), BGA(90) |
產品系列 | 42 = SDR Commercial/Industrial grade |
温度等级 | blank = Commercial Grade (0°C to +70°C) |
焊料類型 | L = 100% matte Sn |
字數 | 160 = 16M |
Generation | F = F |
工作電壓範圍 | S = 3.3V SDR |
總線寬度 | 32 = x32 |
腳位/封裝 | T = TSOP |
ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows.
IC 編號 | 庫存數量 | 可用數量 | IC 編號 | 庫存數量 | 可用數量 |
---|---|---|---|---|---|
IS42S32160F-7TL-TR | 6,500 | IS42S32160F-75EBLI | 6 | 3 | |
IS42S32160F | IS42S32160F-75EBLI-TR | 7,000 | |||
IS42S32160F-6BL | 5,000 | IS42S32160F-75ETL | 50,000 | ||
IS42S32160F-6BL-TR | 7,000 | IS42S32160F-75ETL-TR | 6,500 | ||
IS42S32160F-6BLI | 1 | 93 | IS42S32160F-75ETLI | 4 | 50,000 |
IS42S32160F-6BLI-TR | 7,000 | IS42S32160F-75ETLI-TR | 6,572 | ||
IS42S32160F-6TL | 64 | IS42S32160F-7BL | 167 | 241 | |
IS42S32160F-6TL-TR | 6,500 | IS42S32160F-7BL-TR | 7,000 | ||
IS42S32160F-6TLI | 3 | IS42S32160F-7BLI | 720 | ||
IS42S32160F-6TLI-TR | 6,500 | IS42S32160F-7BLI-TR | 5,000 | ||
IS42S32160F-75EBL | 50,000 | IS42S32160F-7TLI | 123 | 1 | |
IS42S32160F-75EBL-TR | 7,000 | IS42S32160F-7TLI-TR | 6,886 |