IS42S32160F-6TL

容量 512M
規格 16Mx32
電壓 3.3V
類型 SDR
刷新 8K
速度 6 = 166MHz
狀態 Prod
評注
腳位數 TSOP2(86), BGA(90)
温度等级 blank = Commercial Grade (0°C to +70°C)
焊料類型 L = 100% matte Sn
Generation F = F
字數 160 = 16M
工作電壓範圍 S = 3.3V SDR
總線寬度 32 = x32
腳位/封裝 T = TSOP
產品系列 42 = SDR Commercial/Industrial grade

IS42S32160F-6TL 特徵

  • Clock frequency: 166, 143 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45S32160F - Vdd/Vddq = 3.3V IS42/45R32160F - Vdd/Vddq = 2.5
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8K refresh cycles every 64 ms
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command
  • Packages: 90-ball TF-BGA, 86-pin TSOP-ll

概觀

ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42S32160F-6TL-TR 6,500 IS42S32160F-75ETL 50,000
IS42S32160F IS42S32160F-75ETL-TR 6,500
IS42S32160F-6BL 5,000 IS42S32160F-75ETLI 4 50,000
IS42S32160F-6BL-TR 7,000 IS42S32160F-75ETLI-TR 6,572
IS42S32160F-6BLI 1 93 IS42S32160F-7BL 167 241
IS42S32160F-6BLI-TR 7,000 IS42S32160F-7BL-TR 7,000
IS42S32160F-6TLI 3 IS42S32160F-7BLI 720
IS42S32160F-6TLI-TR 6,500 IS42S32160F-7BLI-TR 5,000
IS42S32160F-75EBL 50,000 IS42S32160F-7TL 405 3
IS42S32160F-75EBL-TR 7,000 IS42S32160F-7TL-TR 6,500
IS42S32160F-75EBLI 6 3 IS42S32160F-7TLI 123 1
IS42S32160F-75EBLI-TR 7,000 IS42S32160F-7TLI-TR 6,886