| 容量 | 512M |
|---|---|
| 規格 | 16Mx32 |
| 電壓 | 3.3V |
| 類型 | SDR |
| 刷新 | 8K |
| 速度 | 75E = 133MHz |
| 狀態 | Prod |
| 評注 | |
| 腳位數 | TSOP2(86), BGA(90) |
| 產品系列 | 42 = SDR Commercial/Industrial grade |
| 温度等级 | I = Industrial Grade (-40°C to +85°C) |
| 焊料類型 | L = 100% matte Sn |
| 字數 | 160 = 16M |
| Generation | F = F |
| 工作電壓範圍 | S = 3.3V SDR |
| 總線寬度 | 32 = x32 |
| 腳位/封裝 | T = TSOP |
ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows.
| IC 編號 | 庫存數量 | 可用數量 | IC 編號 | 庫存數量 | 可用數量 |
|---|---|---|---|---|---|
| IS42S32160F-75ETLI-TR | 6,572 | IS42S32160F-75EBLI | 6 | 3 | |
| IS42S32160F | IS42S32160F-75EBLI-TR | 7,000 | |||
| IS42S32160F-6BL | 5,000 | IS42S32160F-75ETL | 50,000 | ||
| IS42S32160F-6BL-TR | 7,000 | IS42S32160F-75ETL-TR | 6,500 | ||
| IS42S32160F-6BLI | 1 | 93 | IS42S32160F-7BL | 167 | 241 |
| IS42S32160F-6BLI-TR | 7,000 | IS42S32160F-7BL-TR | 7,000 | ||
| IS42S32160F-6TL | 64 | IS42S32160F-7BLI | 720 | ||
| IS42S32160F-6TL-TR | 6,500 | IS42S32160F-7BLI-TR | 5,000 | ||
| IS42S32160F-6TLI | 3 | IS42S32160F-7TL | 405 | 3 | |
| IS42S32160F-6TLI-TR | 6,500 | IS42S32160F-7TL-TR | 6,500 | ||
| IS42S32160F-75EBL | 50,000 | IS42S32160F-7TLI | 123 | 1 | |
| IS42S32160F-75EBL-TR | 7,000 | IS42S32160F-7TLI-TR | 6,886 |