容量 | 256M |
---|---|
規格 | 8Mx32 |
電壓 | 2.5/3.3V |
類型 | MSDR |
刷新 | 4K |
狀態 | EOL |
評注 | |
腳位數 | TSOP(86), BGA(90) |
速度Mhz | 133 |
温度等级 | I = Industrial Grade (-40°C to +85°C) |
焊料類型 | L = 100% matte Sn |
Generation | D = D |
字數 | 800 = 8M |
速度 | 75 = 133Mhz |
工作電壓範圍 | RM = 2.5V |
總線寬度 | 32 = x32 |
腳位/封裝 | T = TSOP |
產品系列 | 42 = SDR Commercial/Industrial grade |
外包裝 | Tape on Reel |
ISSI's 256Mb Mobile Synchronous DRAM achieves high- speed data transfer using pipeline architecture. All input and output signals refer to the rising edge of the clock input. Both write and read accesses to the SDRAM are burst oriented. The 256Mb Mobile Synchronous DRAM is designed to minimize current consumption making it ideal for low-power applications. Both TSOP and BGA packages are offered, including industrial grade products.
IC 編號 | 庫存數量 | 可用數量 | IC 編號 | 庫存數量 | 可用數量 |
---|---|---|---|---|---|
IS42RM32800D-75TLI | 6,959 | IS42SM32800D-10BLI-TR | |||
IS42RM32800D-10BLI | IS42SM32800D-10TLI | ||||
IS42RM32800D-10BLI-TR | IS42SM32800D-10TLI-TR | ||||
IS42RM32800D-10TLI | IS42SM32800D-75BL | 5,000 | |||
IS42RM32800D-10TLI-TR | IS42SM32800D-75BL-TR | 6,438 | |||
IS42RM32800D-75BL | 5,000 | IS42SM32800D-75BLI | 6,282 | ||
IS42RM32800D-75BL-TR | 6,624 | IS42SM32800D-75BLI-TR | 5,000 | ||
IS42RM32800D-75BLI | 6,855 | IS42SM32800D-75TLI | 104 | 104 | |
IS42RM32800D-75BLI-TR | 6,233 | IS42SM32800D-75TLI-TR | |||
IS42SM32800D-10BLI | 17 |