IS42SM32800D-10TLI-TR

容量 256M
規格 8Mx32
電壓 2.5/3.3V
類型 MSDR
刷新 4K
狀態 EOL
評注
腳位數 TSOP(86), BGA(90)
速度Mhz 133
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = 100% matte Sn
Generation D = D
字數 800 = 8M
工作電壓範圍 SM = 3.3V
總線寬度 32 = x32
腳位/封裝 T = TSOP
產品系列 42 = SDR Commercial/Industrial grade
外包裝 Tape on Reel

IS42SM32800D-10TLI-TR 特徵

  • -71 7 9.6 KEY TIMING PARAMETERS Parameter -752 CLK Cycle Time CAS Latency = 3 CAS Latency = 2 CLK Frequency CAS Latency = 3 CAS Latency = 2 Access Time from CLK CAS Latency = 3 CAS Latency = 2 143 104 133 104 7.5 9.6 5.4 8 5.4 8 1. Available for x8/x16 only 2. Available for x32 only -10 Unit 10 12 100 83 8 9 ns ns Mhz Mhz ns ns
  • OPTIONS

概觀

ISSI's 256Mb Mobile Synchronous DRAM achieves high- speed data transfer using pipeline architecture. All input and output signals refer to the rising edge of the clock input. Both write and read accesses to the SDRAM are burst oriented. The 256Mb Mobile Synchronous DRAM is designed to minimize current consumption making it ideal for low-power applications. Both TSOP and BGA packages are offered, including industrial grade products.

 

相關IC编號

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IS42SM32800D-10TLI IS42RM32800D-75TLI-TR
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