規格 8Mx32
類型 MSDR
電壓 2.5/3.3V
刷新 4K
速度(MHz) 133
腳位/封裝 B = BGA
狀態 EOL
產品系列 42 = 商業/工業級SDRAM
總線寬度 32 = x32
字數 800 = 8M
代/版本 D
焊接 L = SnAgCu
温規 I = 工業級 (-40C to +85°C)

IS42RM32800D-75BLI 特徵

  • -71 7 9.6 KEY TIMING PARAMETERS Parameter -752 CLK Cycle Time CAS Latency = 3 CAS Latency = 2 CLK Frequency CAS Latency = 3 CAS Latency = 2 Access Time from CLK CAS Latency = 3 CAS Latency = 2 143 104 133 104 7.5 9.6 5.4 8 5.4 8 1. Available for x8/x16 only 2. Available for x32 only -10 Unit 10 12 100 83 8 9 ns ns Mhz Mhz ns ns
  • OPTIONS

概觀

ISSI's 256Mb Mobile Synchronous DRAM achieves high- speed data transfer using pipeline architecture. All input and output signals refer to the rising edge of the clock input. Both write and read accesses to the SDRAM are burst oriented. The 256Mb Mobile Synchronous DRAM is designed to minimize current consumption making it ideal for low-power applications. Both TSOP and BGA packages are offered, including industrial grade products.