1. 矽成
  2. 動態記憶體
  3. 同步動態隨機存取記憶體
  4. Preceding 3.3V Automotive
  5. 16M 1Mx16
  6. TSOP2(50), BGA(60)
  7. IS45S16100E

  IS45S16100E

數據表
索取報價
容量 16M
規格 1Mx16
電壓 3.3V
類型 SDR
刷新 2K
速度 166, 143
狀態 Contact ISSI
評注
腳位數 TSOP2(50), BGA(60)
產品系列 45 = SDR Automotive grade
字數 100 = 1M
工作電壓範圍 S = 3.3V SDR
總線寬度 16 = x16
數據表
索取報價

IS45S16100E 特徵

  • Clock frequency: 200, 166, 143 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Two banks can be operated simultaneously and independently
  • Dual internal bank controlled by A11 (bank select)
  • Single 3.3V power supply
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • 2048 refresh cycles every 32ms (Com, Ind, A1 grade) or 16ms (A2 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command
  • Byte controlled by LDQM and UDQM
  • Packages: 400-mil 50-pin TSOP-II and 60-ball TF-BGA

概觀

ISSI’s 16Mb Synchronous DRAM IS42/4516100E is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS45S16100E-6TLA1 117 IS45S16100E-7BLA2-TR
IS45S16100E-6TLA1-TR 1,000 IS45S16100E-7TLA1 151
IS45S16100E-7BLA1 209 209 IS45S16100E-7TLA1-TR 1,558
IS45S16100E-7BLA1-TR 6,836 IS45S16100E-7TLA2 117
IS45S16100E-7BLA2 1,888 989 IS45S16100E-7TLA2-TR 1,000