1. ISSI
  2. DRAM
  3. SDR SDRAM
  4. Preceding 3.3V Automotive
  5. 16M 1Mx16
  6. TSOP2(50), BGA(60)
  7. IS45S16100E

  IS45S16100E

Datasheet
Get Quote
Density 16M
Org 1Mx16
Vcc 3.3V
Type SDR
Refresh 2K
Speed 166, 143
Status Contact ISSI
Comment
Pkg Pins TSOP2(50), BGA(60)
Product Family 45 = SDR Automotive grade
Number Of Words 100 = 1M
Operating Voltage Range S = 3.3V SDR
Bus Width 16 = x16
Datasheet
Get Quote

IS45S16100E Features

  • Clock frequency: 200, 166, 143 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Two banks can be operated simultaneously and independently
  • Dual internal bank controlled by A11 (bank select)
  • Single 3.3V power supply
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • 2048 refresh cycles every 32ms (Com, Ind, A1 grade) or 16ms (A2 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command
  • Byte controlled by LDQM and UDQM
  • Packages: 400-mil 50-pin TSOP-II and 60-ball TF-BGA

Overview

ISSI’s 16Mb Synchronous DRAM IS42/4516100E is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

 

Related Part Number(s)

Description Stock Qty Available Qty Description Stock Qty Available Qty
IS45S16100E-6TLA1 117 IS45S16100E-7BLA2-TR
IS45S16100E-6TLA1-TR 1,000 IS45S16100E-7TLA1 151
IS45S16100E-7BLA1 209 209 IS45S16100E-7TLA1-TR 1,558
IS45S16100E-7BLA1-TR 6,836 IS45S16100E-7TLA2 117
IS45S16100E-7BLA2 1,888 989 IS45S16100E-7TLA2-TR 1,000