容量 512M
規格 64Mx8
類型 SDR
電壓 3.3V
刷新 8K
速度 7 = up to 143Mhz
腳位/封裝 TSOP2(54)
狀態 EOL
型號別 IBIS-TSOP
產品系列 42 = 商業/工業級SDRAM
總線寬度 8 = x8
字數 6400 = 64M
代/版本 B
焊接 L = 100% matte Sn
温規 I = 工業級 (-40C to +85°C)

IS42S86400B-7TLI 特徵

  • Clock frequency: 166, 143, 133 MHz
  • -6 6 10 166 100 5.4 6 -7 7 10 143 100 5.4 6 -75E Unit
    • 7.5
    • 133
    • 5.5 ns ns Mhz Mhz ns ns
  • Internal bank for hiding row access/precharge
  • Power supply IS42/45S16320B IS42S86400B
  • LVTTL interface
  • Programmable burst length Vdd Vddq 3.3V 3.3V 3.3V 3.3V
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8K refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command
  • Available in 54-pin TSOP-II and 54-ball W-BGA (x16 only)

概觀

ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows.