1. 矽成
  2. 動態記憶體
  3. 同步動態隨機存取記憶體
  4. Preceding 3.3V
  5. 512M 64Mx8
  6. TSOP2(54)
  7. IS42S86400B-75ETL-TR

  IS42S86400B-75ETL-TR

數據表
索取報價
容量 512M
規格 64Mx8
電壓 3.3V
類型 SDR
刷新 8K
速度 75E = 133MHz
狀態 Contact ISSI
評注
腳位數 TSOP2(54)
產品系列 42 = SDR Commercial/Industrial grade
温度等级 blank = Commercial Grade (0°C to +70°C)
焊料類型 L = 100% matte Sn
字數 6400 = 64M
Generation B = B
工作電壓範圍 S = 3.3V SDR
總線寬度 8 = x8
腳位/封裝 T = TSOP
外包裝 Tape on Reel
數據表
索取報價

IS42S86400B-75ETL-TR 特徵

  • Clock frequency: 166, 143, 133 MHz
  • -6 6 10 166 100 5.4 6 -7 7 10 143 100 5.4 6 -75E Unit
    • 7.5
    • 133
    • 5.5 ns ns Mhz Mhz ns ns
  • Internal bank for hiding row access/precharge
  • Power supply IS42/45S16320B IS42S86400B
  • LVTTL interface
  • Programmable burst length Vdd Vddq 3.3V 3.3V 3.3V 3.3V
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8K refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command
  • Available in 54-pin TSOP-II and 54-ball W-BGA (x16 only)

概觀

ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42S86400B-75ETL 1,700 IS42S86400B-75ETLI
IS42S86400B IS42S86400B-75ETLI-TR
IS42S86400B-6TL 3,230 IS42S86400B-7TL 789 750
IS42S86400B-6TL-TR IS42S86400B-7TL-TR 6,874
IS42S86400B-6TLI IS42S86400B-7TLI 588 426
IS42S86400B-6TLI-TR IS42S86400B-7TLI-TR 6,688