規格 16Mx8
類型 SDR
電壓 3.3V
刷新 4K
速度 75 = up to 133Mhz @ CL2
腳位/封裝 TSOP2(54)
狀態 EOL
產品系列 42 = 商業/工業級SDRAM
總線寬度 8 = x8
字數 1600 = 16M
代/版本 E
CL(CAS延遲) E = 6
焊接 L = 100% matte Sn
温規 I = 工業級 (-40C to +85°C)

IS42S81600E-75ETLI 特徵

  • Clock frequency: 200, 166, 143, 133 MHz
  • Internal bank for hiding row access/precharge
  • Power supply IS42S81600E IS42S16800E
  • LVTTL interface
  • Programmable burst length Vdd Vddq 3.3V 3.3V 3.3V 3.3V
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 4096 refresh cycles every 64 ms
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command

概觀

ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized as follows.