IS42S81600E-75ETL-TR

容量 128M
規格 16Mx8
電壓 3.3V
類型 SDR
刷新 4K
速度 75E = 133MHz
狀態 Contact ISSI
評注
腳位數 TSOP2(54)
產品系列 42 = SDR Commercial/Industrial grade
温度等级 blank = Commercial Grade (0°C to +70°C)
焊料類型 L = 100% matte Sn
字數 1600 = 16M
Generation E = E
工作電壓範圍 S = 3.3V SDR
總線寬度 8 = x8
腳位/封裝 T = TSOP
外包裝 Tape on Reel

IS42S81600E-75ETL-TR 特徵

  • Clock frequency: 200, 166, 143, 133 MHz
  • Internal bank for hiding row access/precharge
  • Power supply IS42S81600E IS42S16800E
  • LVTTL interface
  • Programmable burst length Vdd Vddq 3.3V 3.3V 3.3V 3.3V
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 4096 refresh cycles every 64 ms
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command

概觀

ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized as follows.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42S81600E-75ETL 108 IS42S81600E-6TLI 6,004
IS42S81600E IS42S81600E-6TLI-TR 5,000
IS42S81600E-5TL IS42S81600E-75ETLI
IS42S81600E-5TL-TR IS42S81600E-75ETLI-TR
IS42S81600E-5TLI IS42S81600E-7TL 108
IS42S81600E-5TLI-TR IS42S81600E-7TL-TR 5,000
IS42S81600E-6TL 6,772 IS42S81600E-7TLI 6,809
IS42S81600E-6TL-TR 6,708 IS42S81600E-7TLI-TR 5,000