規格 16Mx32
類型 SDR
電壓 3.3V
刷新 8K
速度 75 = up to 133Mhz @ CL2
腳位/封裝 BGA(90)
狀態 EOL
型號別 IBIS-BGA
評注 stacked die
產品系列 42 = 商業/工業級SDRAM
總線寬度 32 = x32
字數 160 = 16M
代/版本 C
焊接 L = SnAgCu
温規 [空白] = 商規 (0C to +70°C)
外包裝 卷轴包

IS42S32160C-75BL-TR 特徵

  • Clock frequency: 166, 133 MHz
  • Fully synchronous operation
  • Internal pipelined architecture
  • Programmable Mode
    • CAS# Latency: 2 or 3
    • Burst Length: 1, 2, 4, 8, or full page
    • Burst Type: interleaved or linear
  • Power supply Vdd/Vddq +3.3V ± 0.3V
  • LVTTL interface
  • Auto Refresh and Self Refresh
  • Individual byte controlled by DQM0-3 OPTIONS:
  • Die revision: C
  • Configuration(s): 16Mx32
  • Package(s): 90 Ball BGA (8x13mm)
  • Lead-free package available

概觀

: The ISSI's IS42S32160C is a 512Mb Synchronous DRAM configured as a quad 4M x32 DRAM. It achieves high-speed data transfer using a pipeline architecture with a synchronous interface. All inputs and outputs sig- nals are registered on the rising edge of the clock input, CLK. The 512Mb SDRAM is internally configured by stacking two 256MB, 16Mx16 devices. Each of the 4M x32 banks is organized as 8192 rows by 512 columns by 32 bits.