| 容量 | 512M |
|---|---|
| 規格 | 16Mx32 |
| 電壓 | 3.3V |
| 類型 | SDR |
| 刷新 | 8K |
| 速度 | 6 = 166MHz |
| 狀態 | Contact ISSI |
| 評注 | stacked die |
| 腳位數 | BGA(90) |
| 產品系列 | 42 = SDR Commercial/Industrial grade |
| 温度等级 | I = Industrial Grade (-40°C to +85°C) |
| 焊料類型 | L = SnAgCu |
| 字數 | 160 = 16M |
| Generation | C = C |
| 工作電壓範圍 | S = 3.3V SDR |
| 總線寬度 | 32 = x32 |
| 腳位/封裝 | B = BGA |
: The ISSI's IS42S32160C is a 512Mb Synchronous DRAM configured as a quad 4M x32 DRAM. It achieves high-speed data transfer using a pipeline architecture with a synchronous interface. All inputs and outputs sig- nals are registered on the rising edge of the clock input, CLK. The 512Mb SDRAM is internally configured by stacking two 256MB, 16Mx16 devices. Each of the 4M x32 banks is organized as 8192 rows by 512 columns by 32 bits.
| IC 編號 | 庫存數量 | 可用數量 | IC 編號 | 庫存數量 | 可用數量 |
|---|---|---|---|---|---|
| IS42S32160C-6BLI-TR | 5,000 | IS42S32160C-6BL-TR | 6,501 | ||
| IS42S32160C | IS42S32160C-75BL | 7,864 | 6,343 | ||
| IS42S32160C-6BI | 100 | 100 | IS42S32160C-75BL-TR | 6,699 | |
| IS42S32160C-6BI-TR | 6,262 | IS42S32160C-75BLI | 5,000 | ||
| IS42S32160C-6BL | 4 | 6,762 | IS42S32160C-75BLI-TR | 6,356 |