IS42S16402J-5BLI

容量	64M
規格	4Mx16
電壓	3.3V
類型	SDR
刷新	4K
速度	5 = 200MHz
狀態	Prod
評注	Reduced Strength Output Drive
腳位數	TSOP2(54), BGA(54), BGA(60)
產品系列	42 = SDR Commercial/Industrial grade
温度等级	I = Industrial Grade (-40°C to +85°C)
焊料類型	L = SnAgCu
字數	402 = 4M
Generation	J = J
工作電壓範圍	S = 3.3V SDR
總線寬度	16 = x16
腳位/封裝	B = BGA

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IS42S16402J-5BLI 特徵

Clock frequency: 200, 166, 143, 133 MHz
Fully synchronous; all signals referenced to a positive clock edge
Internal bank for hiding row access/precharge
Single 3.3V power supply
LVTTL interface
Reduced strength output drive: 12-15mA
Programmable burst length
- (1, 2, 4, 8, full page)
Programmable burst sequence: Sequential/Interleave
Self refresh modes
Auto refresh (CBR)
4096 refresh cycles every 64 ms (Com, Ind, A1 grade) or 16ms (A2 grade)
Random column address every clock cycle
Programmable CAS latency (2, 3 clocks)
Burst read/write and burst read/single write operations capability
Burst termination by burst stop and precharge command OPTIONS
Package: 54-pin TSOP II 54-ball TF-BGA (8mm x 8mm) 60-ball TF-BGA (10.1mm x 6.4mm)

概觀

ISSI's 64Mb Synchronous DRAM is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

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IC 編號

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