1. 矽成
  2. 靜態隨機存取存儲器
  3. QUAD/QUADP and DDR-II/DDR-IIP
  4. QUAD
  5. 18M 512Kx36
  6. 165-ball BGA (15 x 17 mm)
  7. IS61QDB251236C-250M3LI

  IS61QDB251236C-250M3LI

數據表
索取報價
容量 18M
規格 512Kx36
陣 2
狀態 Prod
速度Mhz 250, 300, 333, 400
評論上一版本
產品系列 61 = QUAD/P DDR-2/P
配置 51236 = 512K x36
包裝代碼 M3 = 165-ball BGA (15 x 17 mm)
ROHS版 L = Lead-free
突發類型 B2 = Burst 2
硅片版本 C = C
讀延時（RL） blank = 1.5 clock cycles or 2.5 clock cycles
ODT選項 blank = No ODT
產品類別 QD = QUAD
溫度範圍 I = Industrial (-40°C to +85°C)
速度 250 = 250MHz
數據表
索取報價

IS61QDB251236C-250M3LI 特徵

  • 512Kx36 and 1Mx18 configuration available.
  • On-chip Delay-Locked Loop (DLL) for wide data valid window.
  • Separate independent read and write ports with concurrent read and write operations.
  • Synchronous pipeline read with EARLY write operation.
  • Double Data Rate (DDR) interface for read and write input ports.
  • Fixed 2-bit burst for read and write operations.
  • Clock stop support.
  • Two input clocks (K and K#) for address and control registering at rising edges only. Two output clocks (C and C#) for data output control. Two echo clocks (CQ and CQ#) that are delivered simultaneously with data. +1.8V core power supply and 1.5, 1.8V VDDQ, used with 0.75, 0.9V VREF.
  • HSTL input and output interface.
  • Registered addresses, write and read controls, byte writes, data in, and data outputs.
  • Full data coherency.
  • Boundary scan using limited set of JTAG 1149.1 functions.
  • Byte write capability.
  • Fine ball grid array (FBGA) package: 13mmx15mm and 15mmx17mm body size 165-ball (11 x 15) array
  • Read address
  • Read enable
  • Write enable
  • Byte writes
  • Data-in for early writes The following are registered on the rising edge of the K# clock:
  • Write address
  • Byte writes

概觀

The Mb synchronous, high-performance CMOS static random access memory (SRAM) devices. These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround. The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed. Refer to the.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS61QDB251236C-250M3LI-TR IS61QDB251236C-300M3I
IS61QDB251236C-250B4 IS61QDB251236C-300M3I-TR
IS61QDB251236C-250B4-TR IS61QDB251236C-300M3L 10,000
IS61QDB251236C-250B4I IS61QDB251236C-300M3L-TR
IS61QDB251236C-250B4I-TR IS61QDB251236C-300M3LI 10,000
IS61QDB251236C-250B4L IS61QDB251236C-300M3LI-TR
IS61QDB251236C-250B4L-TR IS61QDB251236C-333B4
IS61QDB251236C-250B4LI IS61QDB251236C-333B4-TR
IS61QDB251236C-250B4LI-TR IS61QDB251236C-333B4I
IS61QDB251236C-250M3 IS61QDB251236C-333B4I-TR
IS61QDB251236C-250M3-TR IS61QDB251236C-333B4L
IS61QDB251236C-250M3I IS61QDB251236C-333B4L-TR
IS61QDB251236C-250M3I-TR IS61QDB251236C-333B4LI
IS61QDB251236C-250M3L 10,000 IS61QDB251236C-333B4LI-TR
IS61QDB251236C-250M3L-TR IS61QDB251236C-333M3
IS61QDB251236C-300B4 IS61QDB251236C-333M3-TR
IS61QDB251236C-300B4-TR IS61QDB251236C-333M3I
IS61QDB251236C-300B4I IS61QDB251236C-333M3I-TR
IS61QDB251236C-300B4I-TR IS61QDB251236C-333M3L 10,000
IS61QDB251236C-300B4L IS61QDB251236C-333M3L-TR
IS61QDB251236C-300B4L-TR IS61QDB251236C-333M3LI 10,000
IS61QDB251236C-300B4LI IS61QDB251236C-333M3LI-TR
IS61QDB251236C-300B4LI-TR IS61QDB251236C-400B4
IS61QDB251236C-300M3 IS61QDB251236C-400B4-TR
IS61QDB251236C-300M3-TR IS61QDB251236C-400B4I
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