| 容量 | 128M |
|---|---|
| 規格 | 8Mx16 |
| 類型 | MSDR |
| 電壓 | 1.8/2.5/3.3V |
| 刷新 | 4K |
| 速度（MHz） | 75 = up to 133Mhz @ CL2 |
| 腳位/封裝 | BGA(54) |
| 狀態 | Prod |
| 型號別 | IBIS-RM/SM, IBIS-VM |
| 產品系列 | 45 = 車規SDRAM |
| 總線寬度 | 16 = x16 |
| 字數 | 800 = 8M |
| 代/版本 | H |
| 焊接 | L = SnAgCu |
| 温規 | A1 = 車規 (-40C to +85°C) |
| 外包裝 | 卷轴包 |
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IS45VM16800H-75BLA1-TR 特徵
- Auto refresh and self refresh
- All pins are compatible with LVCMOS interface
- 4K refresh cycle / 64ms
- Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or Full Page for Sequential Burst
- 4 or 8 for Interleave Burst
- Programmable CAS Latency : 2,3 clocks
- Internal 4 banks operation
- Burst Read Single Write operation
- Special Function Support
- PASR(Partial Array Self Refresh)
- Auto TCSR(Temperature Compensated Self Refresh)
- Programmable Driver Strength Control
- Full Strength or 1/2, 1/4, of Full Strength
- Deep Power Down Mode
- All inputs and outputs referenced to the positive edge of the
- Automatic precharge, includes CONCURRENT Auto Precharge system clock
概觀
These IS42/45SM/RM/VM16800H are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16.