容量 128M
規格 8Mx16
類型 MSDR
電壓 1.8/2.5/3.3V
刷新 4K
速度(MHz) 75 = up to 133Mhz @ CL2
腳位/封裝 BGA(54)
狀態 Prod
型號別 IBIS-RM/SM, IBIS-VM
產品系列 42 = 商業/工業級SDRAM
總線寬度 16 = x16
字數 800 = 8M
代/版本 H
焊接 L = SnAgCu
温規 I = 工業級 (-40C to +85°C)

IS42RM16800H-75BLI 特徵

  • Auto refresh and self refresh
  • All pins are compatible with LVCMOS interface
  • 4K refresh cycle / 64ms
  • Programmable Burst Length and Burst Type
  • 1, 2, 4, 8 or Full Page for Sequential Burst
  • 4 or 8 for Interleave Burst
  • Programmable CAS Latency : 2,3 clocks
  • Internal 4 banks operation
  • Burst Read Single Write operation
  • Special Function Support
  • PASR(Partial Array Self Refresh)
  • Auto TCSR(Temperature Compensated Self Refresh)
  • Programmable Driver Strength Control
  • Full Strength or 1/2, 1/4, of Full Strength
  • Deep Power Down Mode
  • All inputs and outputs referenced to the positive edge of the
  • Automatic precharge, includes CONCURRENT Auto Precharge system clock

概觀

These IS42/45SM/RM/VM16800H are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16.