規格 2Mx32
類型 MSDR
電壓 1.8V
刷新 4K
速度(MHz) 133
腳位/封裝 B = BGA
狀態 EOL
產品系列 42 = 商業/工業級SDRAM
總線寬度 32 = x32
字數 200 = 2M
代/版本 E
焊接 L = SnAgCu
温規 I = 工業級 (-40C to +85°C)

IS42VS32200E-75BLI 特徵

  • Clock frequency: 133, 100 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single 1.8V power supply
  • LVTTL interface
  • Programmable burst length: (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Self refresh modes
  • 4096 refresh cycles every 64 ms
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command
  • Available in 400-mil 86-pin TSOP II and 90-ball BGA

概觀

ISSI's 64Mb Synchronous DRAM IS42VS32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high- speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.