IS42VM16400M-75BLI

容量 64M
規格 4Mx16
電壓 1.8/2.5/3.3V
類型 MSDR
刷新 4K
狀態 Prod
評注
腳位數 BGA(54)
速度Mhz 166, 133
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = SnAgCu
Generation M = M
字數 400 = 4M
速度 75 = 133Mhz
工作電壓範圍 VM = 1.8V mobile SDR
總線寬度 16 = x16
腳位/封裝 B = BGA
產品系列 42 = SDR Commercial/Industrial grade

IS42VM16400M-75BLI 特徵

  • Auto refresh and self refresh
  • All pins are compatible with LVCMOS interface
  • 4K refresh cycle / 64ms
  • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst
  • Programmable CAS Latency : 2,3 clocks
  • All inputs and outputs referenced to the positive edge of the system clock
  • Data mask function by DQM
  • Internal 4 banks operation
  • Burst Read Single Write operation
  • Special Function Support - PASR(Partial Array Self Refresh) - Auto TCSR(Temperature Compensated Self Refresh) - Programmable Driver Strength Control - Full Strength or 1/2, 1/4 of Full Strength - Deep Power Down Mode

概觀

These IS42SM/RM/VM16400M are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,567 words x 16 bits.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42VM16400M-75BLI-TR 5,000 IS42SM16400M-6BLI-TR 2,500
IS42RM16400M-6BLI IS42SM16400M-75BLI 14,279 1,392
IS42RM16400M-6BLI-TR IS42SM16400M-75BLI-TR 7,500
IS42RM16400M-75BLI IS42VM16400M-6BLI 6,814
IS42RM16400M-75BLI-TR IS42VM16400M-6BLI-TR 7,500
IS42SM16400M-6BLI 1,392