1. 矽成
2. Mobile DRAM
3. 低電壓/移動SDR SDRAM
4. Mobile SDR SDRAM
5. 1.8/2.5/3.3V
6. 64M 4Mx16
7. BGA(54)
8. IS42VM16400M-6BLI

IS42VM16400M-6BLI 特徵

• Auto refresh and self refresh
• All pins are compatible with LVCMOS interface
• 4K refresh cycle / 64ms
• Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst
• Programmable CAS Latency : 2,3 clocks
• All inputs and outputs referenced to the positive edge of the system clock
• Data mask function by DQM
• Internal 4 banks operation
• Burst Read Single Write operation
• Special Function Support - PASR(Partial Array Self Refresh) - Auto TCSR(Temperature Compensated Self Refresh) - Programmable Driver Strength Control - Full Strength or 1/2, 1/4 of Full Strength - Deep Power Down Mode

概觀

These IS42SM/RM/VM16400M are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,567 words x 16 bits.