| 規格 | 16Mx16 |
|---|---|
| 類型 | MSDR |
| 電壓 | 1.8/2.5/3.3V |
| 刷新 | 8K |
| 速度（MHz） | 6 = up to 166Mhz |
| 腳位/封裝 | BGA(54) |
| 狀態 | EOL |
| 型號別 | IBIS-RM/SM, IBIS-VM |
| 產品系列 | 42 = 商業/工業級SDRAM |
| 總線寬度 | 16 = x16 |
| 字數 | 160 = 16M |
| 代/版本 | E |
| 焊接 | L = SnAgCu |
| 温規 | I = 工業級 (-40C to +85°C) |
IS42VM16160E-6BLI 特徵
- Auto refresh and self refresh.
- All pins are compatible with LVCMOS interface.
- 8K refresh cycle / 64ms.
- Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.
- Programmable CAS Latency : 2,3 clocks.
- All inputs and outputs referenced to the positive edge of the system clock.
- Data mask function by DQM.
- Internal 4 banks operation.
- Burst Read Single Write operation.
- Special Function Support. - PASR(Partial Array Self Refresh) - Auto TCSR(Temperature Compensated Self Refresh) - Programmable Driver Strength Control
- Full Strength or 3/4, 1/2, 1/4, 1/8 of Full Strength - Deep Power Down Mode
概觀
These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16.