規格 16Mx16
類型 MSDR
電壓 1.8/2.5/3.3V
刷新 8K
速度(MHz) 6 = up to 166Mhz
腳位/封裝 BGA(54)
狀態 EOL
型號別 IBIS-RM/SM, IBIS-VM
產品系列 42 = 商業/工業級SDRAM
總線寬度 16 = x16
字數 160 = 16M
代/版本 E
焊接 L = SnAgCu
温規 I = 工業級 (-40C to +85°C)
外包裝 卷轴包

IS42SM16160E-6BLI-TR 特徵

  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 8K refresh cycle / 64ms.
  • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.
  • Programmable CAS Latency : 2,3 clocks.
  • All inputs and outputs referenced to the positive edge of the system clock.
  • Data mask function by DQM.
  • Internal 4 banks operation.
  • Burst Read Single Write operation.
  • Special Function Support. - PASR(Partial Array Self Refresh) - Auto TCSR(Temperature Compensated Self Refresh) - Programmable Driver Strength Control
  • Full Strength or 3/4, 1/2, 1/4, 1/8 of Full Strength - Deep Power Down Mode

概觀

These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16.