容量 512M
規格 16Mx32
電壓 2.5/3.3V
刷新 8K
速度(MHz) 133
腳位/封裝 BGA(90)
狀態 EOL
產品系列 42 = 商業/工業級SDRAM
總線寬度 32 = x32
字數 160 = 16M
代/版本 C
焊接 L = SnAgCu
温規 I = 工業級 (-40C to +85°C)

IS42SM32160C-7BLI 特徵

  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access and pre- charge
  • Programmable CAS latency: 2, 3
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page
  • Programmable Burst Sequence:
  • Sequential and Interleave
  • Auto Refresh (CBR)
  • TCSR (Temperature Compensated Self Refresh)
  • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full
  • Deep Power Down Mode (DPD)
  • Driver Strength Control (DS): 1/4, 1/2, and Full OPTIONS:
  • Configuration: 16Mx32
  • Power Supply: IS42SMxxx - Vdd/Vddq = 3.3V IS42RMxxx - Vdd/Vddq = 2.5V
  • Package: 90 Ball BGA (8x13mm)
  • Temperature Range: Commercial (0oC to +70oC) Industrial (-40oC to +85oC)


: ISSI's IS42SM/RM32160C is a 512Mb Mobile Syn- chronous DRAM configured as a quad 4M x32 DRAM. It achieves high-speed data transfer using a pipeline architecture with a synchronous interface. All inputs and outputs signals are registered on the rising edge of the clock input, CLK. The 512Mb SDRAM is internally con- figured by stacking two 256Mb, 16Mx16 devices. Each of the 4M x32 banks is organized as 8192 rows by 512 columns by 32 bits.