| 容量 | 16M |
|---|---|
| 規格 | 1Kx16 |
| 腳位/封裝 | 400-mil SOJ |
| 電壓 | 3.3V |
| 刷新 | 1K |
| 速度 | 50 = 50Ns |
| 字數 | 1M |
| 焊接 | 100% matte Sn |
| 狀態 | NR |
| 外包裝 | Tape on Reel |
| 類型 | EDO |
| 總線寬度 | 16 = x16 |
| 温規 | Industrial Grade (-40C to +85°C) |
| 代/版本 | C |
| 產品系列 | 41 = Asynchronous |
| 温度等级 | I = Industrial Grade (-40°C to +85°C) |
| 焊料類型 | L = 100% matte Sn |
| 字數 | 100 = 1M |
| Generation | C = C |
| 工作電壓範圍 | LV = 3.3V |
| 腳位/封裝 | K = S0J |
The ISSI IS41C16100C and IS41LV16100C are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Ac- cess Memories. These devices offer a cycle access called Extended Data Out (EDO) Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 30 ns per 16-bit word. It is asynchronous, as it does not require a clock signal input to synchronize commands and I/O.