| Density | 16M |
|---|---|
| Org | 1Kx16 |
| Pkg(Pins) | 400-mil SOJ |
| Vcc | 3.3V |
| Refresh | 1K |
| Speed | 50 = 50Ns |
| No. of Words | 1M |
| Solder | 100% matte Sn |
| Status | NR |
| Outpack | Tape on Reel |
| Type | EDO |
| Bus Width | 16 = x16 |
| Temp.Range | Industrial Grade (-40C to +85°C) |
| Generation/Rev | C |
| Product Family | 41 = Asynchronous |
| Temp. Grade | I = Industrial Grade (-40°C to +85°C) |
| Solder Type | L = 100% matte Sn |
| Number Of Words | 100 = 1M |
| Generation | C = C |
| Operating Voltage Range | LV = 3.3V |
| Package Type | K = S0J |
The ISSI IS41C16100C and IS41LV16100C are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Ac- cess Memories. These devices offer a cycle access called Extended Data Out (EDO) Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 30 ns per 16-bit word. It is asynchronous, as it does not require a clock signal input to synchronize commands and I/O.