容量 8M
規格 512Kx16
電壓 1.7-1.95V/2.5-3.6V
速度(ns) 70
腳位/封裝 T = TSOP
狀態 Prod
評注 Standard Asynch
產品系列 67 = 車規Pseudo SRAM
硅片版本 E
電壓範圍 BLL = 2.2V (2.4V/2.5V) to 3.6V
焊接 L = 無鉛
温規 A1 = 車規 (-40C to +85°C)

IS67WV51216EBLL-70TLA1 特徵

  • High-Speed access time : - 70ns ( IS66WV51216EALL ) - 60ns (IS66/67WV51216EBLL )
  • CMOS Lower Power Operation
  • Single Power Supply - VDD =1.7V~1.95V( IS66WV51216EALL ) - VDD =2.5V~3.6V (IS66/67WV51216EBLL )
  • Three State Outputs
  • Data Control for Upper and Lower bytes

概觀

The ISSI IS66WV51216EALL and IS66/67WV51216EBLL are.