容量 8M
規格 512Kx16
電壓 1.7-1.95V/2.5-3.6V
速度(ns) 70
腳位/封裝 T = TSOP
狀態 Prod
評注 Standard Asynch
產品系列 66 = Pseudo SRAM
硅片版本 E
電壓範圍 ALL = 1.65V to 2.2V
焊接 L = 無鉛
温規 I = 工業級 (-40C to +85°C)

IS66WV51216EALL-70TLI 特徵

  • High-Speed access time : - 70ns ( IS66WV51216EALL ) - 60ns (IS66/67WV51216EBLL )
  • CMOS Lower Power Operation
  • Single Power Supply - VDD =1.7V~1.95V( IS66WV51216EALL ) - VDD =2.5V~3.6V (IS66/67WV51216EBLL )
  • Three State Outputs
  • Data Control for Upper and Lower bytes

概觀

The ISSI IS66WV51216EALL and IS66/67WV51216EBLL are.