1. 矽成
2. 靜態隨機存取存儲器
3. CellularRAM的/偽SRAM
4. 1.7-1.95V
5. VFBGA(54)
6. IS66WVC4M16ECLL-7008BLI-TR

IS66WVC4M16ECLL-7008BLI-TR 特徵

• Single device supports asynchronous , page, and burst operation
• Mixed Mode supports asynchronous write and synchronous read operation
• Dual voltage rails for optional performance
  • ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
  • CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
• Asynchronous mode read access : 70ns Interpage Read access : 70ns Intrapage Read access : 25ns
• Burst mode for Read and Write operation
  • 4, 8, 16,32 or Continuous
• Low Power Consumption
  • Asynchronous Operation < 30 mA
  • Intrapage Read < 20mA
  • Burst operation < 35 mA (@104Mhz)
  • Standby < 180 uA (max.)
  • Deep power-down (DPD) < 3uA (Typ)
• Low Power Feature
  • Reduced Array Refresh
  • Temperature Controlled Refresh
  • Deep power-down (DPD) mode
• Operation Frequency up to 104Mhz
• Operating temperature Range Industrial: -40°C~85°C Automotive A1: -40°C~85°C

概觀

The IS66WVC4M16EALL/CLL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a standard asynchronous mode and high performance burst mode. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.