Density | 64M |
---|---|
Org | 4Mx16 |
Vcc | 1.7-1.95V |
Status | Prod |
Pkg Pins | VFBGA(54) |
Speed Ns | 70 |
Comment Previous Rev | CRAM 1.5 |
Item | 66 = Pseudo SRAM/HyperRAM™ |
ROHS Version | L = true |
Product Type | WVC = Cellular RAM 1.5 |
Temperature Range | I = Industrial (-40°C to 85°C) |
Speed | 7008 = 80 MHz |
Vdd(V) | CLL = 1.8V |
Density Configuration | 4M16 = 64Mb /4M x16 |
Package Code | B = 54-ball VFBGA |
Outpack | Tape on Reel |
The IS66WVC4M16EALL/CLL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a standard asynchronous mode and high performance burst mode. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.
Description | Stock Qty | Available Qty | Description | Stock Qty | Available Qty |
---|---|---|---|---|---|
IS66WVC4M16ECLL-7008BLI | IS67WVC4M16ECLL-7010BLA1 | ||||
IS66WVC4M16ECLL-7010BLI | 10,000 | IS67WVC4M16ECLL-7010BLA1-TR | |||
IS66WVC4M16ECLL-7010BLI-TR |