1. 矽成
  2. 靜態隨機存取存儲器
  3. 異步 SRAM
  4. High Speed Low Power
  5. 1.65-3.6V
  6. 4M 256Kx16
  7. TSOP2(44), BGA(48)
  8. IS61WV25616BLS

  IS61WV25616BLS

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容量 4M
規格 256Kx16
腳位/封裝 TSOP2(44), BGA(48)
電壓 1.65-3.6V
型號別 IBIS
狀態 Prod
評注 IS61LV25616AL
速度（ns） 8, 10, 20
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IS61WV25616BLS 特徵

  • High-speed access time: 8, 10, 20 ns
  • Low Active Power: 85 mW (typical)
  • Low Standby Power: 7 mW (typical) CMOS standby LOW POWER: (IS61/64WV25616ALS/BLS)
  • High-speed access time: 25, 35, 45 ns
  • Low Active Power: 35 mW (typical)
  • Low Standby Power: 0.6 mW (typical) CMOS standby
  • Single power supply — Vdd 1.65V to 2.2V (IS61WV25616Axx) — Vdd 2.4V to 3.6V (IS61/64WV25616Bxx)
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes

概觀

The ISSI IS61WV25616Axx/Bxx and IS64WV25616Bxx are high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits. It is fabricated using ISSI's high- performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.