IS61WV25616BLS - RI-YAO Electronics Ltd. | ISSI Authorized Distributor

Density	4M
Org	256Kx16
Pkg(Pins)	TSOP2(44), BGA(48)
Vcc	1.65-3.6V
Models	IBIS
Status	Prod
Comment	IS61LV25616AL
Speed(ns)	8, 10, 20

Density

Org

256Kx16

Pkg(Pins)

TSOP2(44), BGA(48)

Vcc

1.65-3.6V

Models

IBIS

Status

Prod

Comment

IS61LV25616AL

Speed(ns)

8, 10, 20

IS61WV25616BLS Features

High-speed access time: 8, 10, 20 ns
Low Active Power: 85 mW (typical)
Low Standby Power: 7 mW (typical) CMOS standby LOW POWER: (IS61/64WV25616ALS/BLS)
High-speed access time: 25, 35, 45 ns
Low Active Power: 35 mW (typical)
Low Standby Power: 0.6 mW (typical) CMOS standby
Single power supply — Vdd 1.65V to 2.2V (IS61WV25616Axx) — Vdd 2.4V to 3.6V (IS61/64WV25616Bxx)
Fully static operation: no clock or refresh required
Three state outputs
Data control for upper and lower bytes

Overview

The ISSI IS61WV25616Axx/Bxx and IS64WV25616Bxx are high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits. It is fabricated using ISSI's high- performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.