| 容量 | 512M |
|---|---|
| 規格 | 64Mx8 |
| 電壓 | 3.3V |
| 類型 | SDR |
| 刷新 | 8K |
| 速度 | 6 = 166MHz |
| 狀態 | Prod |
| 評注 | |
| 腳位數 | TSOP2(54) |
| 產品系列 | 42 = SDR Commercial/Industrial grade |
| 温度等级 | I = Industrial Grade (-40°C to +85°C) |
| 焊料類型 | L = 100% matte Sn |
| 字數 | 6400 = 64M |
| Generation | F = F |
| 工作電壓範圍 | S = 3.3V SDR |
| 總線寬度 | 8 = x8 |
| 腳位/封裝 | T = TSOP |
ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows.
| IC 編號 | 庫存數量 | 可用數量 | IC 編號 | 庫存數量 | 可用數量 |
|---|---|---|---|---|---|
| IS42S86400F-6TLI-TR | 6,500 | IS42S86400F-7TL-TR | 6,829 | ||
| IS42S86400F-6TL | 75 | 5,000 | IS42S86400F-7TLI | 44 | 50,000 |
| IS42S86400F-6TL-TR | 6,834 | IS42S86400F-7TLI-TR | 1,500 | ||
| IS42S86400F-7TL | 178 | 3 |