IS42S86400F-6TL-TR

容量	512M
規格	64Mx8
電壓	3.3V
類型	SDR
刷新	8K
速度	6 = 166MHz
狀態	Prod
評注
腳位數	TSOP2(54)
產品系列	42 = SDR Commercial/Industrial grade
温度等级	blank = Commercial Grade (0°C to +70°C)
焊料類型	L = 100% matte Sn
字數	6400 = 64M
Generation	F = F
工作電壓範圍	S = 3.3V SDR
總線寬度	8 = x8
腳位/封裝	T = TSOP
外包裝	Tape on Reel

數據表

索取報價

IS42S86400F-6TL-TR 特徵

Clock frequency: 200, 166, 143 MHz
Fully synchronous; all signals referenced to a positive clock edge
Internal bank for hiding row access/precharge
Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxF - Vdd/Vddq = 3.3V IS42/45RxxxxxF - Vdd/Vddq = 2.5
LVTTL interface
Programmable burst length
- (1, 2, 4, 8, full page)
Programmable burst sequence: Sequential/Interleave
Auto Refresh (CBR)
Self Refresh
8K refresh cycles every 64 ms
Random column address every clock cycle
Programmable CAS latency (2, 3 clocks)
Burst read/write and burst read/single write operations capability
Burst termination by burst stop and precharge command
Packages: x8/x16: 54-pin TSOP-II, 54-ball TF-BGA (x16 only)

概觀

ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows.

IC 編號	庫存數量	可用數量	IC 編號	庫存數量	可用數量
IS42S86400F-6TL	75	5,000	IS42S86400F-7TL-TR		6,829
IS42S86400F-6TLI		1	IS42S86400F-7TLI	44	50,000
IS42S86400F-6TLI-TR		6,500	IS42S86400F-7TLI-TR		1,500
IS42S86400F-7TL	178	3

IS42S86400F-6TL-TR

IS42S86400F-6TL-TR 特徵

概觀

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