| 容量 | 512M |
|---|---|
| 規格 | 16Mx32 |
| 電壓 | 3.3V |
| 類型 | SDR |
| 刷新 | 8K |
| 速度 | 75E = 133MHz |
| 狀態 | Contact ISSI |
| 評注 | |
| 腳位數 | TSOP2(86), BGA(90) |
| 產品系列 | 42 = SDR Commercial/Industrial grade |
| 温度等级 | I = Industrial Grade (-40°C to +85°C) |
| 焊料類型 | L = 100% matte Sn |
| 字數 | 160 = 16M |
| Generation | B = B |
| 工作電壓範圍 | S = 3.3V SDR |
| 總線寬度 | 32 = x32 |
| 腳位/封裝 | T = TSOP |
| 外包裝 | Tape on Reel |
ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized in 4Meg x 32 bit x 4 Banks.
| IC 編號 | 庫存數量 | 可用數量 | IC 編號 | 庫存數量 | 可用數量 |
|---|---|---|---|---|---|
| IS42S32160B-75ETLI | 6,495 | IS42S32160B-75EBLI | 23 | 6,795 | |
| IS42S32160B | IS42S32160B-75EBLI-TR | 6,114 | |||
| IS42S32160B-6BL | 115 | IS42S32160B-75ETL | |||
| IS42S32160B-6BL-TR | IS42S32160B-75ETL-TR | ||||
| IS42S32160B-6BLI | 322 | 278 | IS42S32160B-7BL | 263 | 144 |
| IS42S32160B-6BLI-TR | 6,621 | IS42S32160B-7BL-TR | 6,692 | ||
| IS42S32160B-6TL | 50 | 50 | IS42S32160B-7BLI | 1,375 | 1,089 |
| IS42S32160B-6TL-TR | 1,500 | IS42S32160B-7BLI-TR | 6,508 | ||
| IS42S32160B-6TLI | 2,245 | 1,163 | IS42S32160B-7TL | 2,409 | 82 |
| IS42S32160B-6TLI-TR | 6,882 | IS42S32160B-7TL-TR | 6,224 | ||
| IS42S32160B-75EBL | IS42S32160B-7TLI | 515 | |||
| IS42S32160B-75EBL-TR | IS42S32160B-7TLI-TR | 6,799 |