IS42S32160B-75EBL-TR

容量	512M
規格	16Mx32
電壓	3.3V
類型	SDR
刷新	8K
速度	75E = 133MHz
狀態	Contact ISSI
評注
腳位數	TSOP2(86), BGA(90)
產品系列	42 = SDR Commercial/Industrial grade
温度等级	blank = Commercial Grade (0°C to +70°C)
焊料類型	L = SnAgCu
字數	160 = 16M
Generation	B = B
工作電壓範圍	S = 3.3V SDR
總線寬度	32 = x32
腳位/封裝	B = BGA
外包裝	Tape on Reel

數據表

索取報價

IS42S32160B-75EBL-TR 特徵

Clock frequency: 166, 143 MHz
Fully synchronous; all signals referenced to a positive clock edge
Internal bank for hiding row access/precharge
Single Power supply: 3.3V + 0.3V
LVTTL interface
Programmable burst length
- (1, 2, 4, 8, full page)
Programmable burst sequence: Sequential/Interleave
Auto Refresh (CBR)
Self Refresh
8192 refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
Random column address every clock cycle
Programmable CAS latency (2, 3 clocks)
Burst read/write and burst read/single write operations capability
Burst termination by burst stop and precharge command OPTIONS
Package: 86-pin TSOP-II 90-ball W-BGA

概觀

ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized in 4Meg x 32 bit x 4 Banks.

IC 編號	庫存數量	可用數量	IC 編號	庫存數量	可用數量
IS42S32160B-75EBL			IS42S32160B-75ETL
IS42S32160B			IS42S32160B-75ETL-TR
IS42S32160B-6BL		115	IS42S32160B-75ETLI		6,495
IS42S32160B-6BL-TR			IS42S32160B-75ETLI-TR		6,777
IS42S32160B-6BLI	322	278	IS42S32160B-7BL	263	144
IS42S32160B-6BLI-TR		6,621	IS42S32160B-7BL-TR		6,692
IS42S32160B-6TL	50	50	IS42S32160B-7BLI	1,375	1,089
IS42S32160B-6TL-TR		1,500	IS42S32160B-7BLI-TR		6,508
IS42S32160B-6TLI	2,245	1,163	IS42S32160B-7TL	2,409	82
IS42S32160B-6TLI-TR		6,882	IS42S32160B-7TL-TR		6,224
IS42S32160B-75EBLI	23	6,795	IS42S32160B-7TLI		515
IS42S32160B-75EBLI-TR		6,114	IS42S32160B-7TLI-TR		6,799

IC 編號

庫存數量

可用數量

IC 編號

庫存數量

可用數量

115