1. 矽成
  2. 動態記憶體
  3. 同步動態隨機存取記憶體
  4. Preceding 3.3V
  5. 512M 16Mx32
  6. TSOP2(86), BGA(90)
  7. IS42S32160B-75EBL

  IS42S32160B-75EBL

數據表
索取報價
容量 512M
規格 16Mx32
電壓 3.3V
類型 SDR
刷新 8K
速度 75E = 133MHz
狀態 Contact ISSI
評注
腳位數 TSOP2(86), BGA(90)
產品系列 42 = SDR Commercial/Industrial grade
温度等级 blank = Commercial Grade (0°C to +70°C)
焊料類型 L = SnAgCu
字數 160 = 16M
Generation B = B
工作電壓範圍 S = 3.3V SDR
總線寬度 32 = x32
腳位/封裝 B = BGA
數據表
索取報價

IS42S32160B-75EBL 特徵

  • Clock frequency: 166, 143 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single Power supply: 3.3V + 0.3V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8192 refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 86-pin TSOP-II 90-ball W-BGA

概觀

ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized in 4Meg x 32 bit x 4 Banks.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42S32160B-75EBL-TR IS42S32160B-75ETL
IS42S32160B IS42S32160B-75ETL-TR
IS42S32160B-6BL 115 IS42S32160B-75ETLI 6,495
IS42S32160B-6BL-TR IS42S32160B-75ETLI-TR 6,777
IS42S32160B-6BLI 322 278 IS42S32160B-7BL 263 144
IS42S32160B-6BLI-TR 6,621 IS42S32160B-7BL-TR 6,692
IS42S32160B-6TL 50 50 IS42S32160B-7BLI 1,375 1,089
IS42S32160B-6TL-TR 1,500 IS42S32160B-7BLI-TR 6,508
IS42S32160B-6TLI 2,245 1,163 IS42S32160B-7TL 2,409 82
IS42S32160B-6TLI-TR 6,882 IS42S32160B-7TL-TR 6,224
IS42S32160B-75EBLI 23 6,795 IS42S32160B-7TLI 515
IS42S32160B-75EBLI-TR 6,114 IS42S32160B-7TLI-TR 6,799