| 容量 | 16M |
|---|---|
| 規格 | 1Mx16 |
| 電壓 | 3.3V |
| 類型 | SDR |
| 刷新 | 2K |
| 速度 | 6 = 166MHz |
| 狀態 | Contact ISSI |
| 評注 | |
| 腳位數 | TSOP2(50), BGA(60) |
| 產品系列 | 42 = SDR Commercial/Industrial grade |
| 温度等级 | I = Industrial Grade (-40°C to +85°C) |
| 焊料類型 | L = SnAgCu |
| 字數 | 100 = 1M |
| Generation | E = E |
| 工作電壓範圍 | S = 3.3V SDR |
| 總線寬度 | 16 = x16 |
| 腳位/封裝 | B = BGA |
ISSI’s 16Mb Synchronous DRAM IS42/4516100E is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.
| IC 編號 | 庫存數量 | 可用數量 | IC 編號 | 庫存數量 | 可用數量 |
|---|---|---|---|---|---|
| IS42S16100E-6BLI-TR | 6,142 | IS42S16100E-6TL-TR | 6,714 | ||
| IS42S16100E | IS42S16100E-6TLI | 6,549 | |||
| IS42S16100E-5BL | 286 | IS42S16100E-6TLI-TR | 6,009 | ||
| IS42S16100E-5BL-TR | 2,500 | IS42S16100E-7BL | 896 | 538 | |
| IS42S16100E-5T | 117 | IS42S16100E-7BL-TR | 6,921 | ||
| IS42S16100E-5T-TR | 1,000 | IS42S16100E-7BLI | 5,001 | 1,899 | |
| IS42S16100E-5TL | 6,504 | IS42S16100E-7BLI-TR | 5,000 | ||
| IS42S16100E-5TL-TR | 6,954 | IS42S16100E-7T | 117 | ||
| IS42S16100E-6BL | 6,660 | IS42S16100E-7T-TR | 1,000 | ||
| IS42S16100E-6BL-TR | 6,671 | IS42S16100E-7TL | 3,694 | 998 | |
| IS42S16100E-6T | 117 | IS42S16100E-7TL-TR | 6,177 | ||
| IS42S16100E-6T-TR | 1,000 | IS42S16100E-7TLI | 2,340 | 72 | |
| IS42S16100E-6TL | 50 | 6,411 | IS42S16100E-7TLI-TR | 6,427 |