IS49NLS96400A-18WBLI

IS49NLS96400A-18WBLI 特徵

533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x18 at 533 MHz clock frequency)
Reduced cycle time (15ns at 533MHz)
32ms refresh (16K refresh for each bank; 128K refresh command must be issued in total each 32ms)
8 internal banks
Non-multiplexed addresses (address multiplexing option available)
SRAM-type interface
Programmable READ latency (RL), row cycle time, and burst sequence length
Balanced READ and WRITE latencies in order to optimize data bus utilization
Data mask signals (DM) to mask signal of WRITE data; DM is sampled on both edges of DK. OPTIONS
Package:  144-ball WBGA (lead-free) NOVEMBER 2017
Differential input clocks (CK, CK#)
Differential input data clocks (DKx, DKx#)
On-die DLL generates CK edge-aligned data and output data clock signals
Data valid signal (QVLD)
HSTL I/O (1.5V or 1.8V nominal)
25-60Ω matched impedance outputs
2.5V VEXT, 1.8V VDD, 1.5V or 1.8V VDDQ I/O
On-die termination (ODT) RTT
Operating temperature: IEEE 1149.1 compliant JTAG boundary scan Commercial (TC = 0° to +95°C) Industrial (TC = -40°C to +95°C; TA = -40°C to +85°C)
Configuration:  64Mx9  32Mx18