IS42VM16160D-8BLI

容量 256M
規格 16Mx16
電壓 1.8V
類型 MSDR
刷新 8K
狀態 EOL
評注
腳位數 TSOP(54), BGA(54)
速度Mhz 125
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = SnAgCu
Generation D = D
字數 160 = 16M
工作電壓範圍 VM = 1.8V mobile SDR
總線寬度 16 = x16
腳位/封裝 B = BGA
產品系列 42 = SDR Commercial/Industrial grade

IS42VM16160D-8BLI 特徵

  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access and pre- charge
  • Programmable CAS latency: 2, 3
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page
  • Programmable Burst Sequence:
  • Sequential and Interleave
  • Auto Refresh (CBR)
  • TCSR (Temperature Compensated Self Refresh)
  • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full
  • Deep Power Down Mode (DPD)
  • Driver Strength Control (DS): 1/4, 1/2, and Full OPTIONS
  • Configurations:
    • 32M x 8
    • 16M x 16
    • 8M x 32
  • Power Supply IS42VMxxx
    • Vdd/Vddq = 1.8V
  • Packages: x8
    • TSOP II (54) x16
    • TSOP II (54), BGA (54) x32
    • TSOP II (86), BGA (90)

概觀

ISSI's 256Mb Mobile Synchronous DRAM achieves high- speed data transfer using pipeline architecture. All input and output signals refer to the rising edge of the clock input. Both write and read accesses to the SDRAM are burst oriented. The 256Mb Mobile Synchronous DRAM is designed to minimize current consumption making it ideal for low-power applications. Both TSOP and BGA packages are offered, including industrial grade products.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42VM16160D-8BLI-TR 6,428 IS42VM16160D-8TLI 5,403 2,799
IS42VM16160D-8BL 1,038 905 IS42VM16160D-8TLI-TR 1,500
IS42VM16160D-8BL-TR 6,430