IS42R83200J-75TL

容量 256M
規格 32Mx8
電壓 2.5V
類型 SDR
刷新 8K
狀態 Contact ISSI
評注
腳位數 TSOP2(54), BGA(54)
速度Mhz 133, 100
温度等级 blank = Commercial Grade (0°C to +70°C)
焊料類型 L = 100% matte Sn
Generation J = J
字數 3200 = 32M
速度 75 = 133Mhz
工作電壓範圍 R = 2.5V DDR or 2.5V SDR
總線寬度 8 = x8
腳位/封裝 T = TSOP
產品系列 42 = SDR Commercial/Industrial grade

IS42R83200J-75TL 特徵

  • Clock frequency: 133, 100 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single Power supply: 2.5V + 0.2V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8K refresh cycles every 32 ms (A2 grade) or 64 ms (commercial, industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 54-pin TSOP-II 54-ball BGA

概觀

ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized as follows.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42R83200J-75TL-TR IS45R83200J-75CTLA1
IS42R83200J-75BL IS45R83200J-75CTLA1-TR
IS42R83200J-75BL-TR IS45R83200J-75CTLA2
IS42R83200J-75BLI IS45R83200J-75CTLA2-TR
IS42R83200J-75BLI-TR IS45R83200J-75TLA1
IS42R83200J-75TLI IS45R83200J-75TLA1-TR
IS42R83200J-75TLI-TR IS45R83200J-75TLA2
IS45R83200J-75BLA1 IS45R83200J-75TLA2-TR
IS45R83200J-75BLA1-TR