IS43TR81280C-107MBLI

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容量 1G
規格 128Mx8
電壓 1.5V
類型 DDR3
刷新 8K
速度 107 = 933MHz
狀態 Prod
腳位數 BGA(78)
評論上一篇
產品系列 43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = SnAgCu
字數 1280 = 128M
CL(CAS延遲) M = 13
Generation C = C
工作電壓範圍 TR = 1.5V DDR3
總線寬度 8 = x8
腳位/封裝 B = BGA

IS43TR81280C-107MBLI 特徵

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
  • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V
  • High speed data transfer rates with system frequency up to 933 MHz
  • 8 internal banks for concurrent operation
  • 8n-bit pre-fetch architecture
  • Programmable CAS Latency
  • Programmable Additive Latency: 0, CL-1,CL-2
  • Programmable CAS WRITE latency (CWL) based on tCK
  • Programmable Burst Length: 4 and 8
  • Programmable Burst Sequence: Sequential or Interleave
  • BL switch on the fly
  • Auto Self Refresh(ASR)
  • Self Refresh Temperature(SRT)
  • Refresh Interval: 7.8 µs (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 µs (8192 cycles/32 ms) Tc= 85°C to 105°C 1.95 µs (8192 cycles/16 ms) Tc= 105°C to 115°C 0.97 µs (8192 cycles/8 ms) Tc= 115°C to 125°C OPTIONS
  • Configuration: 128Mx8 64Mx16
  • Package: 96-ball BGA (9mm x 13mm) for x16 78-ball BGA (8mm x 10.5mm) for x8 SPEED BIN Speed Option 125J 107M JEDEC Speed Grade DDR3-1600J DDR3-1866M DECEMBER 2020
  • Partial Array Self Refresh
  • Asynchronous RESET pin
  • TDQS (Termination Data Strobe) supported (x8 only)
  • OCD (Off-Chip Driver Impedance Adjustment)
  • Dynamic ODT (On-Die Termination)
  • Driver strength : RZQ/7, RZQ/6 (RZQ = 240  )
  • Write Leveling
  • Up to 200 MHz in DLL off mode
 

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