IS43DR16160A-3DBLI

容量	256M
規格	16Mx16
電壓	1.8V
類型	DDR2
刷新	8K
速度	3 = 333MHz
狀態	EOL
評注
腳位數	WBGA(84)
產品系列	43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade
温度等级	I = Industrial Grade (-40°C to +85°C)
焊料類型	L = SnAgCu
字數	160 = 16M
CL（CAS延遲）	D = 5
Generation	A = A
工作電壓範圍	DR = 1.8V DDR2
總線寬度	16 = x16
腳位/封裝	B = BGA

數據表

索取報價

IS43DR16160A-3DBLI 特徵

Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V
JEDEC standard 1.8V I/O (SSTL_18-compatible)
Double data rate interface: two data transfers per clock cycle
Differential data strobe (DQS, DQS)
4-bit prefetch architecture
On chip DLL to align DQ and DQS transitions with CK
4 internal banks for concurrent operation
Programmable CAS latency (CL) 3, 4, 5, and 6 supported
Posted CAS and programmable additive latency (AL) 0, 1, 2, 3, 4, and 5 supported
WRITE latency = READ latency - 1 tCK
Programmable burst lengths: 4 or 8
Adjustable data-output drive strength, full and reduced strength options
On-die termination (ODT) OPTIONS
Configuration(s): 32Mx8 (8Mx8x4 banks) IS43/46DR83200A 16Mx16 (4Mx16x4 banks) IS43/46DR16160A
Package: x8: 60-ball TW-BGA (8mm x 10.5mm) x16: 84-ball TW-BGA (8mm x 12.5mm) Timing
- Cycle time 2.5ns @CL=6 DDR2-800E 3.0ns @CL=5 DDR2-667D 3.75ns @CL=4 DDR2-533C 5.0ns @CL=3 DDR2-400B

概觀

ISSI's 256Mb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation. The double-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls.

相關IC编號

IC 編號	庫存數量	可用數量	IC 編號	庫存數量	可用數量
IS43DR16160A-3DBLI-TR		6,927	IS43DR16160A-37CBLI-TR		6,328
IS43DR16160A-25EBL		6,192	IS43DR16160A-3DBI	6,347	3,854
IS43DR16160A-25EBL-TR		6,906	IS43DR16160A-3DBI-TR		6,171
IS43DR16160A-25EBLI	20,280	10,450	IS43DR16160A-3DBL	30	6,364
IS43DR16160A-25EBLI-TR		6,861	IS43DR16160A-3DBL-TR		6,495
IS43DR16160A-37CBL	21,822	4,831	IS43DR16160A-5BBLI	15,329	6,270
IS43DR16160A-37CBL-TR		6,143	IS43DR16160A-5BBLI-TR		6,734
IS43DR16160A-37CBLI	4,067	618