| 容量 | 1M |
|---|---|
| 規格 | 128Kx8 |
| 電壓 | 1.65-3.6V |
| 狀態 | Prod |
| 腳位數 | SOP(32), sTSOP1(32), TSOP1(32), BGA(36) |
| 速度Ns | 45, 55 |
| 評論上一篇 | |
| 產品系列 | 62 = Low Power |
| Bit Org | 8 = x8 |
| Operating Voltage | WV = Wide Voltage Range |
| 包裝代碼 | B = BGA |
| 電壓範圍 | ALL = 1.65V to 2.2V |
| 温度等级 | I = Industrial Grade (-40°C to +85°C) |
| 焊料類型 | blank = SnPb |
| 字數 | 128 = 128K |
| Revision | F = F |
| 速度 | 55 = 55NS |
SRAM is one of random access memories. SRAM has three different modes supported. Each function is described below with Truth Table. STANDBY MODE Device enters standby mode when deselected (CS1# HIGH or CS2 LOW). The input and output pins (I/O0-7) are placed in a high impedance state. CMOS input in this mode will maximize saving power. WRITE MODE Write operation issues with Chip selected (CS1# LOW and CS2 HIGH) and Write Enable (WE#) input LOW. The input and output pins (I/O0-7) are in data input mode. Output buffers are closed during this time even if OE# is LOW. READ MODE Read operation issues with Chip selected (CS1# LOW and CS2 HIGH) and Write Enable (WE#) input HIGH. When OE# is LOW, output buffer turns on to make data output. Any input to I/O pins during READ mode is not permitted. In the READ mode, output buffers can be turned off by pulling OE# HIGH. In this mode, internal device operates as READ but I/Os are in a high impedance state. Since device is in READ mode, active current is used. TRUTH TABLE.