規格 128Kx8
電壓 1.65-3.6V
速度(ns) 45
腳位/封裝 Q = SOP
狀態 S=NOW
產品系列 62 = 低電量
硅片版本 F
電壓範圍 BLL = 2.2V (2.4V/2.5V) to 3.6V
焊接 L = 無鉛
温規 I = 工業級 (-40C to +85°C)

IS62WV1288FBLL-45QLI 特徵

  • High-speed access time: 45ns, 55ns
  • CMOS low power operation
    • Operating Current: 26mA (max) at 125°C
    • CMOS Standby Current: 3.0 uA (typ) at 25°C
  • TTL compatible interface levels
  • Single power supply
    • 1.65V-2.2V VDD (IS62/65WV1288FALL)
    • 2.2V-3.6V VDD (IS62/65WV1288FBLL)
  • Three state outputs
  • Industrial and Automotive temperature support

概觀

SRAM is one of random access memories. SRAM has three different modes supported. Each function is described below with Truth Table. STANDBY MODE Device enters standby mode when deselected (CS1# HIGH or CS2 LOW). The input and output pins (I/O0-7) are placed in a high impedance state. CMOS input in this mode will maximize saving power. WRITE MODE Write operation issues with Chip selected (CS1# LOW and CS2 HIGH) and Write Enable (WE#) input LOW. The input and output pins (I/O0-7) are in data input mode. Output buffers are closed during this time even if OE# is LOW. READ MODE Read operation issues with Chip selected (CS1# LOW and CS2 HIGH) and Write Enable (WE#) input HIGH. When OE# is LOW, output buffer turns on to make data output. Any input to I/O pins during READ mode is not permitted. In the READ mode, output buffers can be turned off by pulling OE# HIGH. In this mode, internal device operates as READ but I/Os are in a high impedance state. Since device is in READ mode, active current is used. TRUTH TABLE.